MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDD86102LZ
N-Channel 100V 35A 54W Surface Mount DPAK(TO-252)
DPAK(TO-252)ROHS3 CompliantActive
MOSFET N-CH 100V 35A DPAK(TO-252)
- Manufacturer
- onsemi
- Manufacturer part #
- FDD86102LZ
- Store part #
- C111627
- Package / case
- DPAK(TO-252)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,027 in stock
#C111627
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹180.14 | ₹180.14 |
| 10+ | ₹153.00 | ₹1,530.00 |
| 30+ | ₹139.34 | ₹4,180.20 |
| 100+ | ₹125.88 | ₹12,588.00 |
| 500+ | ₹113.08 | ₹56,540.00 |
| 1,000+ | ₹108.95 | ₹1,08,950.00 |
1 × ₹180.14
₹180.14
excl. GST
₹212.57 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDD86102LZ
₹180.14 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 245pF
- Ciss-Input Capacitance
- 1.54nF
- Pd - Power Dissipation
- 54W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 35A
- Reverse Transfer Capacitance (Crss)
- 15pF
- RDS(on)
- 31mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 18nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.438 g
Overview
This N-Channel MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
- DC - DC Conversion
- Inverter
- Synchronous Rectifier
Key features
- Shielded Gate MOSFET Technology
- Max rDS(on)=22.5 mΩ at VGS=10 V, ID=8 A
- Max rDS(on)=31 mΩ at VGS=4.5 V, ID=7 μA
- HBM ESD protection level >6 kV typical
- Very low Qg and Qgd compared to competing trench technologies
- Fast switching speed
- 100% UIL tested
- RoHS Compliant
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Similar parts — check the datasheet before substituting.
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