MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDD86113LZ
N-Channel 100V 5.5A 29W Surface Mount DPAK(TO-252)
DPAK(TO-252)ROHS3 CompliantActive
MOSFET N-CH 100V 5.5A DPAK(TO-252)
- Manufacturer
- onsemi
- Manufacturer part #
- FDD86113LZ
- Store part #
- C903587
- Package / case
- DPAK(TO-252)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
483 in stock
#C903587
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹189.72 | ₹189.72 |
| 10+ | ₹156.55 | ₹1,565.50 |
| 30+ | ₹138.33 | ₹4,149.90 |
| 100+ | ₹112.10 | ₹11,210.00 |
| 500+ | ₹103.00 | ₹51,500.00 |
| 1,000+ | ₹98.87 | ₹98,870.00 |
1 × ₹189.72
₹189.72
excl. GST
₹223.87 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDD86113LZ
₹189.72 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 55pF
- Ciss-Input Capacitance
- 285pF
- Pd - Power Dissipation
- 29W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 5.5A
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 104mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 6nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.04 g
Overview
This N-Channel logic Level MOSFETs are produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Applications
- DC-DC conversion
Key features
- Shielded Gate MOSFET Technology
- Max rDS(on)=104 mΩ at VGS=10 Vs , ID=4.2 A
- Max rDS(on)=156 mΩ at VGS=4.5 V , VD=3.4 A
- HBM ESD protection level >6 kV typical
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
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Similar parts — check the datasheet before substituting.
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