MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDG8842CZ
25V 0.41A 0.3W Surface Mount SOT-323-6L
SOT-323-6LROHS CompliantActive
MOSFET 25V 0.41A SOT-323-6L
- Manufacturer
- onsemi
- Manufacturer part #
- FDG8842CZ
- Store part #
- C464156
- Package / case
- SOT-323-6L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,440 in stock
#C464156
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹266.09 | ₹266.09 |
| 10+ | ₹224.38 | ₹2,243.80 |
| 30+ | ₹198.54 | ₹5,956.20 |
| 100+ | ₹171.82 | ₹17,182.00 |
| 500+ | ₹159.87 | ₹79,935.00 |
| 1,000+ | ₹154.66 | ₹1,54,660.00 |
1 × ₹266.09
₹266.09
excl. GST
₹313.99 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDG8842CZ
₹266.09 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 20pF;30pF
- Ciss-Input Capacitance
- 70pF
- Pd - Power Dissipation
- 300mW
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 25V
- Current - Continuous Drain(Id)
- 410mA
- Reverse Transfer Capacitance (Crss)
- 25pF
- RDS(on)
- 1.1Ω@4.5V
- Number
- 1 N-Channel + 1 P-Channel
- Gate Charge(Qg)
- 1.68nC@4.5V
- Vgs
- ±12V;8V
- Gate Threshold Voltage (Vgs(th))
- 650mV
- Type
- N-Channel + P-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.014 g
Overview
Very low level gate drive requirements allowing direct operation in zv circuits (VGS(th) < 1.5V) These N & P-Channel logic level enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. Very small package outline SC70-6
Key features
- Q1: N-Channel
- Max rDS(on) = 0.4 Ω at VGS = 4.5 V, ID = 0.75 A
- Max rDS(on) = 0.5 Ω at VGS = 2.7 V, ID = 0.67 A
- Q2: P-Channel
- Max rDS(on) = 1.1 Ω at VGS = -4.5 V, ID = -0.41 A
- Max rDS(on) = 1.5 Ω at VGS = -2.7 V, ID = -0.25 A
- Minimal gate drive requirement, allowing direct operation in 3V circuits (VGS(th) < 1.5 V)
- Ultra-small SC70-6 package
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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