MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
FDMC5614P-B8-VB
68W 60V 36A 21mΩ@10V 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs
DFN-8(3x3)RoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- FDMC5614P-B8-VB
- Store part #
- C52109961
- Package / case
- DFN-8(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C52109961
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹118.43 | ₹118.43 |
| 10+ | ₹97.76 | ₹977.60 |
| 30+ | ₹87.30 | ₹2,619.00 |
| 100+ | ₹77.06 | ₹7,706.00 |
| 500+ | ₹63.36 | ₹31,680.00 |
| 1,000+ | ₹60.30 | ₹60,300.00 |
1 × ₹118.43
₹118.43
excl. GST
₹139.75 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
FDMC5614P-B8-VB
₹118.43 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 310pF
- Ciss-Input Capacitance
- 2.6nF
- Pd - Power Dissipation
- 68W
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Current - Continuous Drain(Id)
- 36A
- Reverse Transfer Capacitance (Crss)
- 200pF
- RDS(on)
- 21mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 65nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
Key features
- Trench Power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
- DFN 3x3 EP
Alternatives
Similar parts — check the datasheet before substituting.
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