MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMS0312S
30V 4.9mΩ@10V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS
PQFN-8(5x6)ROHS3 CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS0312S
- Store part #
- C891041
- Package / case
- PQFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
200 in stock
#C891041
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹99.89 | ₹99.89 |
| 10+ | ₹97.70 | ₹977.00 |
| 30+ | ₹96.18 | ₹2,885.40 |
| 100+ | ₹94.66 | ₹9,466.00 |
1 × ₹99.89
₹99.89
excl. GST
₹117.87 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS0312S
₹99.89 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 735pF
- Ciss-Input Capacitance
- 2.82nF
- Pd - Power Dissipation
- 2.5W;46W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 19A;42A
- Reverse Transfer Capacitance (Crss)
- 90pF
- RDS(on)
- 4.9mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 46nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.169 g
Overview
The FDMS0312S is designed to minimize losses in power conversion applications. Combining advances in silicon and packaging technology, it achieves the lowest RDS(ON) while maintaining excellent switching performance. The device also offers the additional benefit of a high-efficiency monolithic Schottky body diode.
Applications
- Synchronous rectifier for DC/DC converters
- Notebook Vcore/GPU low-side switch
- Networking point-of-load low-side switch
- Desktop PC
Key features
- Max rDS(on) = 4.9 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 5.8 mΩ at VGS = 4.5 V, ID = 14 A
- Advanced package and silicon technology combination for low RDS(ON) and high efficiency
- SyncFET Schottky body diode
- MSL1 robust package design
- 100% UIL tested
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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