MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMS2D5N08C
138W 80V 166A 2.2mΩ@10V 1 N-channel N-Channel Power56-8 Single FETs, MOSFETs RoHS
Power56-8ROHS3 CompliantActive
N-Channel Shielded Gate PowerTrench MOSFET，80V,166A,2.7mΩ
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS2D5N08C
- Store part #
- C891048
- Package / case
- Power56-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C891048
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹413.77 | ₹413.77 |
| 10+ | ₹407.75 | ₹4,077.50 |
| 30+ | ₹403.66 | ₹12,109.80 |
| 100+ | ₹399.57 | ₹39,957.00 |
1 × ₹413.77
₹413.77
excl. GST
₹488.25 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS2D5N08C
₹413.77 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.48nF
- Ciss-Input Capacitance
- 4.455nF
- Pd - Power Dissipation
- 138W
- Drain to Source Voltage
- 80V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 166A
- Reverse Transfer Capacitance (Crss)
- 59pF
- RDS(on)
- 2.2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 60nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.9V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.137 g
Overview
This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Applications
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC
- Motor Drive
- Solar
Key features
- Shielded Gate MOSFET technology
- Max rDS(on) = 2.7 mΩ at VGS = 10 V, ID = 68 A
- Max rDS(on) = 6.7 mΩ at VGS = 6 V, ID = 34 A
- 50% lower Qrr vs. competing MOSFET suppliers
- Reduced switching noise/EMI
- MSL1 robust package design
- 100% UIS tested
- RoHS compliant
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