MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMS7658AS
N-Channel 30V 176A 89W Surface Mount DFN-8(5x6)
DFN-8(5x6)ROHS CompliantActive
MOSFET N-CH 30V 176A DFN-8(5x6)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS7658AS
- Store part #
- C236896
- Package / case
- DFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
684 in stock
#C236896
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹142.67 | ₹142.67 |
| 10+ | ₹118.38 | ₹1,183.80 |
| 30+ | ₹105.17 | ₹3,155.10 |
| 100+ | ₹90.20 | ₹9,020.00 |
| 500+ | ₹83.69 | ₹41,845.00 |
| 1,000+ | ₹80.66 | ₹80,660.00 |
1 × ₹142.67
₹142.67
excl. GST
₹168.35 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS7658AS
₹142.67 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.685nF
- Ciss-Input Capacitance
- 7.35nF
- Pd - Power Dissipation
- 89W
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 176A
- Reverse Transfer Capacitance (Crss)
- 230pF
- RDS(on)
- 1.9mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 109nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.216 g
Overview
The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/ GPU Low Side Switch
- Networking Point of Load Low Side Switch
- Telecom Secondary Side Rectification
Key features
- Max rDS(on)=1.9 mΩ at VGS=10 V , ID=28 A
- Max rDS(on)=2.2 mΩ at VGS=7 V , ID=26 A
- Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
- SyncFETTM Schottky Body Diode
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS Compliant
Alternatives
Similar parts — check the datasheet before substituting.
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