MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMS8320LDC
40V 192A 3.2W Surface Mount DualCool-56-8
DualCool-56-8ROHS3 CompliantActive
MOSFET 40V 192A DualCool-56-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS8320LDC
- Store part #
- C891082
- Package / case
- DualCool-56-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
27 in stock
#C891082
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹458.46 | ₹458.46 |
| 10+ | ₹395.33 | ₹3,953.30 |
| 30+ | ₹357.88 | ₹10,736.40 |
| 100+ | ₹320.01 | ₹32,001.00 |
| 500+ | ₹302.60 | ₹1,51,300.00 |
| 1,000+ | ₹294.75 | ₹2,94,750.00 |
1 × ₹458.46
₹458.46
excl. GST
₹540.98 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS8320LDC
₹458.46 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.255nF
- Ciss-Input Capacitance
- 11.635nF
- Pd - Power Dissipation
- 3.2W
- Drain to Source Voltage
- 40V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 192A
- Reverse Transfer Capacitance (Crss)
- 185pF
- RDS(on)
- 1.1mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 170nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.16 g
Overview
This N-channel MOSFET is manufactured using ON Semiconductor's advanced POWERTRENCH process. Combining the advantages of silicon technology and DUAL COOL packaging, it delivers excellent switching performance with extremely low junction-to-ambient thermal resistance, while providing ultra-low on-resistance rDS(on).
Applications
- OringFET/Load Switching
- Synchronous Rectification
- DC−DC Conversion
Key features
- Max RDS(on)=1.1 mΩ at VGS=10 V, ID=44 A
- Max RDS(on)=1.5 mΩ at VGS=4.5 V, ID=37 A
- Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is Pb−Free, Halogen Free and RoHS Compliant
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