MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMS86101DC
N-Channel 100V 60A 125W Surface Mount PQFN-8(5x6)
PQFN-8(5x6)ROHS3 CompliantActive
MOSFET N-CH 100V 60A PQFN-8(5x6)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS86101DC
- Store part #
- C605042
- Package / case
- PQFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
3,777 in stock
#C605042
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹78.44 | ₹78.44 |
| 10+ | ₹62.37 | ₹623.70 |
| 30+ | ₹54.32 | ₹1,629.60 |
| 100+ | ₹46.29 | ₹4,629.00 |
| 500+ | ₹41.50 | ₹20,750.00 |
| 1,000+ | ₹39.12 | ₹39,120.00 |
1 × ₹78.44
₹78.44
excl. GST
₹92.56 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS86101DC
₹78.44 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 467pF
- Ciss-Input Capacitance
- 3.135nF
- Pd - Power Dissipation
- 125W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 60A
- Reverse Transfer Capacitance (Crss)
- 35pF
- RDS(on)
- 7.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 44nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.236 g
Overview
This N−Channel MOSFET is produced using Fairchild Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.
Applications
- Primary DC−DC MOSFET
- Secondary Synchronous Rectifier
- Load Switch
Key features
- Shielded Gate MOSFET Technology
- DUAL COOL Top Side Cooling PQFN package
- Max rDS(on)=7.5 mΩ at VGS=10 Vz, ID=14.5 A
- Max rDS(on)=12 mΩ at VGS=6 V, ID=11.5 A
- High performance technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS Compliant
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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