Varnitronics
FDMS86150A onsemi
onsemi

FDMS86150A

100V 80A 113W 4.2mΩ@10V 1 N-channel N-Channel PowerTDFN-8 Single FETs, MOSFETs RoHS

PowerTDFN-8ROHS3 CompliantActive
Manufacturer
onsemi
Manufacturer part #
FDMS86150A
Store part #
C891089
Package / case
PowerTDFN-8
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C891089

Stock & price checked 34 h ago

QuantityUnit pricePack price
1+₹967.23₹967.23
10+₹950.24₹9,502.40
30+₹938.85₹28,165.50
100+₹927.67₹92,767.00

1 × ₹967.23

₹967.23

excl. GST

₹1,141.33 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

FDMS86150A

₹967.23 for 1 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
100V
Current - Continuous Drain(Id)
80A
Output Capacitance(Coss)
703pF
Ciss-Input Capacitance
3.33nF
Pd - Power Dissipation
113W
Reverse Transfer Capacitance (Crss)
20pF
RDS(on)
4.2mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
47nC
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
3V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.54 g

Overview

This N-channel MOSFET is manufactured using the advanced POWERTRENCH process, which incorporates shielded gate technology. This process is optimized for on-resistance while maintaining excellent switching performance.

Applications

  • Primary DC-DC MOSFET
  • Secondary Synchronous Rectifier
  • Load Switch

Key features

  • Shielded gate MOSFET technology
  • Maximum rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
  • Maximum rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
  • Advanced package and silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • Lead-free and RoHS compliant

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