MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMS86252L
N-Channel 150V 12A 50W Surface Mount Power-56-8
Power-56-8ROHS3 CompliantActive
MOSFET N-CH 150V 12A Power-56-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS86252L
- Store part #
- C606108
- Package / case
- Power-56-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,398 in stock
#C606108
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹177.90 | ₹177.90 |
| 10+ | ₹146.63 | ₹1,466.30 |
| 30+ | ₹129.24 | ₹3,877.20 |
| 100+ | ₹109.91 | ₹10,991.00 |
| 500+ | ₹101.22 | ₹50,610.00 |
| 1,000+ | ₹97.32 | ₹97,320.00 |
1 × ₹177.90
₹177.90
excl. GST
₹209.92 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS86252L
₹177.90 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 74pF
- Ciss-Input Capacitance
- 1.335nF
- Pd - Power Dissipation
- 50W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 150V
- Current - Continuous Drain(Id)
- 12A
- Reverse Transfer Capacitance (Crss)
- 3pF
- RDS(on)
- 46mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 15nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.15 g
Overview
This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. The process is optimized for on-resistance while maintaining excellent switching performance.
Applications
- OR-gate FET / load switch
- Synchronous rectification
- DC-DC conversion
Key features
- Shield gate MOSFET technology
- Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.4 A
- Max rDS(on) = 71 mΩ at VGS = 6 V, ID = 3.8 A
- Max rDS(on) = 75 mΩ at VGS = 4.5 V, ID = 3.7 A
- Advanced package and silicon combination for low rDS(on) and high efficiency
- Next-generation enhanced body diode technology with soft recovery characteristics
- MSL1 robust package design
- 100% UIL tested
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | HSBA20N15S#C701044HUASHUO · PRPAK5x6-8L | HUASHUO | PRPAK5x6-8L | 6,319 | ₹75.19 · 6,319 in stock | View |
 | AGM55N15A#C22399944AGMSEMI · PDFN-8(5x6) | AGMSEMI | PDFN-8(5x6) | 1,976 | ₹52.05 · 1,976 in stock | View |
 | HSBA23N15A#C54842103HUASHUO · PRPAK-8(5x6) | HUASHUO | PRPAK-8(5x6) | On request | ₹69.70 · 0 in stock | View |
 | BSC520N15NS3G#C386368Infineon · TDSON-8(5x6) | Infineon | TDSON-8(5x6) | 1,199 | ₹128.89 · 1,199 in stock | View |
 | BMO15N651#C55497936BORN · PDFN-8(5x6) | BORN | PDFN-8(5x6) | 990 | ₹45.22 · 990 in stock | View |
Same category
