MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMT80080DC
N-Channel 80V 36A 254A 3.2W 156W Surface Mount DualCool-88-8
DualCool-88-8ROHS3 CompliantActive
MOSFET N-CH 80V 36A 254A DualCool-88-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDMT80080DC
- Store part #
- C463720
- Package / case
- DualCool-88-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
363 in stock
#C463720
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹643.45 | ₹643.45 |
| 10+ | ₹547.07 | ₹5,470.70 |
| 30+ | ₹489.97 | ₹14,699.10 |
| 100+ | ₹432.01 | ₹43,201.00 |
| 500+ | ₹405.31 | ₹2,02,655.00 |
| 1,000+ | ₹393.16 | ₹3,93,160.00 |
1 × ₹643.45
₹643.45
excl. GST
₹759.27 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMT80080DC
₹643.45 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.08nF
- Ciss-Input Capacitance
- 20.72nF
- Pd - Power Dissipation
- 3.2W;156W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 36A;254A
- Reverse Transfer Capacitance (Crss)
- 56pF
- RDS(on)
- 1.35mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 273nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.31 g
Overview
This N-channel MOSFET is manufactured using advanced PowerTrench technology. The seamless integration of advanced silicon technology and Dual Cool package technology delivers minimum rDS(on) while maintaining superior switching performance through ultra-low junction-to-ambient thermal resistance.
Applications
- ORing FET / Load Switch
- Synchronous Rectification
- DC-DC Conversion
Key features
- Maximum rDS(on) = 1.35 mΩ (VGS = 10 V, ID = 36 A)
- Maximum rDS(on) = 1.82 mΩ (VGS = 8 V, ID = 31 A)
- Low rDS(on) with advanced silicon packaging for high efficiency
- Next-generation advanced body diode technology, designed for soft recovery
- Thin 8x8mm MLP package
- MSL1 robust package design
- 100% UIL tested
- RoHS compliant
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