MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
onsemiDatasheet (PDF)
FDP61N20
N-Channel 200V 61A 417W Through Hole TO-220
TO-220ROHS3 CompliantActive
MOSFET N-CH 200V 61A TO-220
- Manufacturer
- onsemi
- Manufacturer part #
- FDP61N20
- Store part #
- C364876
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
163 in stock
#C364876
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹323.08 | ₹323.08 |
| 10+ | ₹270.80 | ₹2,708.00 |
| 50+ | ₹238.42 | ₹11,921.00 |
| 100+ | ₹204.95 | ₹20,495.00 |
| 500+ | ₹189.82 | ₹94,910.00 |
| 800+ | ₹183.35 | ₹1,46,680.00 |
1 × ₹323.08
₹323.08
excl. GST
₹381.23 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
FDP61N20
₹323.08 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 840pF
- Ciss-Input Capacitance
- 3.38nF
- Pd - Power Dissipation
- 417W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 200V
- Current - Continuous Drain(Id)
- 61A
- Reverse Transfer Capacitance (Crss)
- 120pF
- RDS(on)
- 41mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 75nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.88 g
Overview
UniFET™ MOSFETs are based on planar stripe and DMOS technology. These MOSFETs are designed to minimize on-resistance, provide superior switching performance, and deliver higher avalanche energy ratings. This device family is suitable for switched-mode power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts.
Applications
- PDP TV - Lighting - UPS - AC-DC Power Supply
Key features
- RDS(on) = 34 mΩ (typ.) @ VGS = 10 V, ID = 30.5 A
- Low gate charge (typ. 58 nC)
- Low Crss (typ. 80 pF)
- 100% avalanche tested
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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