Varnitronics
FDPF12N60NZ onsemi
onsemi

FDPF12N60NZ

N-Channel 600V 12A 39W Through Hole TO-220F

TO-220FROHS3 CompliantActive

MOSFET N-CH 600V 12A TO-220F

Manufacturer
onsemi
Manufacturer part #
FDPF12N60NZ
Store part #
C36638
Package / case
TO-220F
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

400 in stock

#C36638

Stock & price checked 8 days ago

QuantityUnit pricePack price
1+₹325.21₹325.21
10+₹278.44₹2,784.40
50+₹233.63₹11,681.50
100+₹203.61₹20,361.00
500+₹189.90₹94,950.00
1,000+₹184.03₹1,84,030.00

1 × ₹325.21

₹325.21

excl. GST

₹383.75 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 50 per tube

FDPF12N60NZ

₹325.21 for 1 + GST

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Specifications

Output Capacitance(Coss)
200pF
Ciss-Input Capacitance
1.676nF
Pd - Power Dissipation
39W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
600V
Current - Continuous Drain(Id)
12A
Reverse Transfer Capacitance (Crss)
18pF
RDS(on)
650mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
34nC@10V
Vgs
±30V
Gate Threshold Voltage (Vgs(th))
5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
50 / Tube
Sold per
Piece
Minimum order
1
Unit weight
2.89 g

Overview

UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Applications

  • LCD/ LED/ PDP TV
  • Lighting
  • Uninterruptible Power Supply

Key features

  • RDS(on) = 530 mΩ (Typ.) @ ID = 6 A
  • Low Gate Charge (Typ. 26 nC)
  • Low Crss (Typ. 12 pF)
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • ESD Improved Capability
  • RoHS Compliant

Alternatives

Similar parts — check the datasheet before substituting.

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