MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDS2572
N-Channel 150V 4.9A 2.5W Surface Mount SO-8
SO-8ROHS3 CompliantActive
MOSFET N-CH 150V 4.9A SO-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDS2572
- Store part #
- C903616
- Package / case
- SO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
808 in stock
#C903616
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹104.94 | ₹104.94 |
| 10+ | ₹83.69 | ₹836.90 |
| 30+ | ₹73.07 | ₹2,192.10 |
| 100+ | ₹62.67 | ₹6,267.00 |
| 500+ | ₹56.37 | ₹28,185.00 |
| 1,000+ | ₹53.13 | ₹53,130.00 |
1 × ₹104.94
₹104.94
excl. GST
₹123.83 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDS2572
₹104.94 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 220pF
- Ciss-Input Capacitance
- 2.87nF
- Pd - Power Dissipation
- 2.5W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 150V
- Current - Continuous Drain(Id)
- 4.9A
- Reverse Transfer Capacitance (Crss)
- 80pF
- RDS(on)
- 40mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 29nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.5 g
Overview
UltraFET® devices combine multiple features to deliver superior efficiency in power conversion applications. These devices are optimized for on-resistance (Rds(on)), low ESR, low total gate charge and Miller gate charge, making them ideal for high-frequency DC-to-DC converters.
Applications
- DC-to-DC converters
- Telecom and data communications distributed power architectures
- 48V input half-bridge/full-bridge circuits
- 24V forward and push-pull topologies
Key features
- On-resistance RDS(ON) = 0.040 Ω (typical), VGS = 10 V
- Total gate charge Qg(TOT) = 29 nC (typical), VGS = 10 V
- Low reverse recovery charge (QRR) body diode
- Efficiency maximization at high frequency
- Unclamped inductive switching (UIS) rated
Alternatives
Similar parts — check the datasheet before substituting.
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