MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDS6673BZ
P-Channel 30V 14.5A 2.5W Surface Mount SO-8
SO-8ROHS3 CompliantActive
MOSFET P-CH 30V 14.5A SO-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDS6673BZ
- Store part #
- C467780
- Package / case
- SO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,359 in stock
#C467780
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹131.90 | ₹131.90 |
| 10+ | ₹106.91 | ₹1,069.10 |
| 30+ | ₹94.53 | ₹2,835.90 |
| 100+ | ₹82.15 | ₹8,215.00 |
| 500+ | ₹74.76 | ₹37,380.00 |
| 1,000+ | ₹71.06 | ₹71,060.00 |
1 × ₹131.90
₹131.90
excl. GST
₹155.64 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDS6673BZ
₹131.90 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 600pF
- Ciss-Input Capacitance
- 4.7nF
- Pd - Power Dissipation
- 2.5W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 14.5A
- Reverse Transfer Capacitance (Crss)
- 600pF
- RDS(on)
- 7.8mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 124nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 1.9V
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.12 g
Overview
This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Applications
- Power Management
- load switching applications in Notebook Computers
- load switching applications in Portable Battery Packs
Key features
- Max rDS(on)=7.8mΩ, VGS=-10V, ID=-14.5A
- Max rDS(on)=12mΩ, VGS=-4.5V, lD=-12A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 6.5KV typical
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS compliant
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