MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDS6675BZ
P-Channel 30V 11A 2.5W Surface Mount SO-8
SO-8ROHS3 CompliantActive
MOSFET P-CH 30V 11A SO-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDS6675BZ
- Store part #
- C188503
- Package / case
- SO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1,663 in stock
#C188503
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹55.75 | ₹55.75 |
| 10+ | ₹44.65 | ₹446.50 |
| 30+ | ₹39.86 | ₹1,195.80 |
| 100+ | ₹33.76 | ₹3,376.00 |
| 500+ | ₹28.10 | ₹14,050.00 |
| 1,000+ | ₹26.58 | ₹26,580.00 |
1 × ₹55.75
₹55.75
excl. GST
₹65.79 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDS6675BZ
₹55.75 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 335pF
- Ciss-Input Capacitance
- 1.855nF
- Pd - Power Dissipation
- 2.5W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 11A
- Reverse Transfer Capacitance (Crss)
- 330pF
- RDS(on)
- 21.8mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 44nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.207 g
Overview
This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Applications
- Power Management
- load switching applications in Notebook Computers
- load switching applications in Portable Battery Packs
Key features
- Max rDS(0n)=13mΩ at VGS=-10V, ID = -11A
- Max rDS(on)=21.8mΩ at VGS=-4.5V, ID = -9A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 5.4 KV typical
- High performance trench technology for extremely low rDS(on)
- High power and current handing capability
- RoHS Compliant
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