MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDS6681Z
P-Channel 30V 20A 2.5W Surface Mount SO-8
SO-8ROHS3 CompliantActive
MOSFET P-CH 30V 20A SO-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDS6681Z
- Store part #
- C236906
- Package / case
- SO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
954 in stock
#C236906
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹194.48 | ₹194.48 |
| 10+ | ₹161.38 | ₹1,613.80 |
| 30+ | ₹143.31 | ₹4,299.30 |
| 100+ | ₹122.83 | ₹12,283.00 |
| 500+ | ₹113.69 | ₹56,845.00 |
| 1,000+ | ₹109.54 | ₹1,09,540.00 |
1 × ₹194.48
₹194.48
excl. GST
₹229.49 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDS6681Z
₹194.48 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.4nF
- Ciss-Input Capacitance
- 7.54nF
- Pd - Power Dissipation
- 2.5W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 20A
- Reverse Transfer Capacitance (Crss)
- 1.12nF
- RDS(on)
- 6.5mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 260nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 1.8V
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.19 g
Overview
This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Applications
- Power Management
- load switching applications in Notebook Computers
- load switching applications in Portable Battery Packs
Key features
- –20 A, -30 V. RDS(ON)=4.6 mΩ @ VGS=-10 V, RDS(ON)=6.5 mΩ @ VGS=-4.5 V
- Extended VGSS range (-25 V) for battery applications
- HBM ESD protection level of 8 kV typical
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Termination is Lead-free and RoHS Compliant
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