MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
FDS8447-NL-VB
N-Channel 40V 10A 2.5W Surface Mount SO-8
SO-8RoHSActive
MOSFET N-CH 40V 10A SO-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- FDS8447-NL-VB
- Store part #
- C6705263
- Package / case
- SO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
90 in stock
#C6705263
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹71.42 | ₹71.42 |
| 10+ | ₹58.57 | ₹585.70 |
| 30+ | ₹52.91 | ₹1,587.30 |
| 100+ | ₹45.93 | ₹4,593.00 |
| 500+ | ₹33.96 | ₹16,980.00 |
| 1,000+ | ₹32.23 | ₹32,230.00 |
1 × ₹71.42
₹71.42
excl. GST
₹84.28 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
FDS8447-NL-VB
₹71.42 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 40V
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 2nF
- Pd - Power Dissipation
- 2.5W
- Reverse Transfer Capacitance (Crss)
- 150pF
- Number
- 1 N-channel
- Gate Charge(Qg)
- 15nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.133 g
Overview
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are manufactured using second-generation MDmesh™ technology. These innovative devices feature a new strip-layout vertical structure, offering ultralow on-resistance and excellent switching performance. They are ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Applications
- Synchronous rectification
- Point-of-load (POL), intermediate bus converter (IBC)
- Secondary side
- N-channel MOSFET
Key features
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- 100% unclamped inductive switching (UIS) tested
- RoHS compliant per directive 2002/95/EC
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