MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FQA13N80-F109
N-Channel 800V 12.6A 300W Through Hole TO-3PN
TO-3PNROHS3 CompliantActive
MOSFET N-CH 800V 12.6A TO-3PN
- Manufacturer
- onsemi
- Manufacturer part #
- FQA13N80-F109
- Store part #
- C463976
- Package / case
- TO-3PN
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
915 in stock
#C463976
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹509.57 | ₹509.57 |
| 10+ | ₹441.99 | ₹4,419.90 |
| 30+ | ₹360.94 | ₹10,828.20 |
| 90+ | ₹320.30 | ₹28,827.00 |
| 450+ | ₹301.62 | ₹1,35,729.00 |
| 900+ | ₹293.14 | ₹2,63,826.00 |
1 × ₹509.57
₹509.57
excl. GST
₹601.29 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
FQA13N80-F109
₹509.57 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 275pF
- Ciss-Input Capacitance
- 3.5nF
- Pd - Power Dissipation
- 300W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Current - Continuous Drain(Id)
- 12.6A
- Reverse Transfer Capacitance (Crss)
- 39pF
- RDS(on)
- 750mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 88nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7 g
Overview
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Applications
- switched mode power supplies
- active power factor correction (PFC)
- electronic lamp ballasts
Key features
- 12.6 A, 800 V, RDS(on)=750 mΩ (Max.) @ ID=6.3 A
- Low Gate Charge (Typ. 68 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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