Varnitronics
FQB4N80TM onsemi
onsemi

FQB4N80TM

3.13W 800V 3.9A 3.6Ω@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

D2PAK(TO-263)ROHS3 CompliantActive

MOSFET N-CH 800V 3.9A D2PAK(TO-263)

Manufacturer
onsemi
Manufacturer part #
FQB4N80TM
Store part #
C467464
Package / case
D2PAK(TO-263)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

753 in stock

#C467464

Stock & price checked 9 days ago

QuantityUnit pricePack price
1+₹141.80₹141.80
10+₹127.06₹1,270.60
30+₹119.04₹3,571.20
100+₹109.93₹10,993.00
500+₹105.81₹52,905.00
800+₹104.08₹83,264.00

1 × ₹141.80

₹141.80

excl. GST

₹167.32 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 800 per reel

FQB4N80TM

₹141.80 for 1 + GST

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Specifications

Output Capacitance(Coss)
75pF
Ciss-Input Capacitance
880pF
Pd - Power Dissipation
3.13W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
800V
Current - Continuous Drain(Id)
3.9A
Reverse Transfer Capacitance (Crss)
12pF
RDS(on)
3.6Ω@10V
Number
1 N-channel
Gate Charge(Qg)
25nC@640V
Vgs
±30V
Gate Threshold Voltage (Vgs(th))
5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
800 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1.66 g

Overview

This N-channel enhancement-mode power MOSFET is fabricated using planar stripe and DMOS technology. This advanced MOSFET technology has been specially designed to minimize on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Applications

  • Switching mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Key features

  • 3.9 A, 800 V; R DS(on) = 3.6 Ω (max) at V GS = 10 V, I D = 1.95 A
  • Low gate charge (typical 19 nC)
  • Low C rss (typical 8.6 pF)
  • 100% avalanche tested

Alternatives

Similar parts — check the datasheet before substituting.

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