MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
VBsemi ElecDatasheet (PDF)
FQD1N60TM-VB
60W 650V 2A 3.8Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs
TO-252RoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- FQD1N60TM-VB
- Store part #
- C54177051
- Package / case
- TO-252
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C54177051
Stock & price checked 32 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹77.73 | ₹77.73 |
| 10+ | ₹62.26 | ₹622.60 |
| 30+ | ₹55.51 | ₹1,665.30 |
| 100+ | ₹47.24 | ₹4,724.00 |
| 500+ | ₹40.93 | ₹20,465.00 |
| 1,000+ | ₹38.75 | ₹38,750.00 |
1 × ₹77.73
₹77.73
excl. GST
₹91.72 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FQD1N60TM-VB
₹77.73 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 40pF
- Ciss-Input Capacitance
- 330pF
- Pd - Power Dissipation
- 60W
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 2A
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 3.8Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 15nC
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
Key features
- Low gate charge Qg, reduced drive requirements
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance, avalanche voltage, and current
- RoHS compliant with Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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