MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FQD2N60CTM
N-Channel 600V 1.9A 2.5W Surface Mount TO-252(DPAK)
TO-252(DPAK)ROHS3 CompliantActive
MOSFET N-CH 600V 1.9A TO-252(DPAK)
- Manufacturer
- onsemi
- Manufacturer part #
- FQD2N60CTM
- Store part #
- C5386
- Package / case
- TO-252(DPAK)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
4,920 in stock
#C5386
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹102.47 | ₹102.47 |
| 10+ | ₹83.32 | ₹833.20 |
| 30+ | ₹73.74 | ₹2,212.20 |
| 100+ | ₹64.39 | ₹6,439.00 |
| 500+ | ₹49.60 | ₹24,800.00 |
| 1,000+ | ₹46.77 | ₹46,770.00 |
1 × ₹102.47
₹102.47
excl. GST
₹120.91 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FQD2N60CTM
₹102.47 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 20pF
- Ciss-Input Capacitance
- 235pF
- Pd - Power Dissipation
- 2.5W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 1.9A
- Reverse Transfer Capacitance (Crss)
- 3pF
- RDS(on)
- 4.7Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 12nC@480V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.438 g
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Applications
- high efficiency switched mode power supplies
- active power factor correction
- electronic lamp ballasts based on half bridge topology
Key features
- These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
- This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 1.9A, 600V, RDS(on)=4.7Ω @ VGS=10V
- Low gate charge ( typical 8.5 nC)
- Low Crss ( typical 4.3 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Alternatives
Similar parts — check the datasheet before substituting.
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