Varnitronics
FQD5P20TM onsemi
onsemi

FQD5P20TM

P-Channel 200V 3.7A 2.5W Surface Mount DPAK

DPAKROHS3 CompliantActive

MOSFET P-CH 200V 3.7A DPAK

Manufacturer
onsemi
Manufacturer part #
FQD5P20TM
Store part #
C455151
Package / case
DPAK
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,314 in stock

#C455151

Stock & price checked 7 days ago

QuantityUnit pricePack price
1+₹115.14₹115.14
10+₹96.92₹969.20
30+₹87.82₹2,634.60
100+₹78.71₹7,871.00
500+₹73.29₹36,645.00
1,000+₹70.48₹70,480.00

1 × ₹115.14

₹115.14

excl. GST

₹135.87 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

FQD5P20TM

₹115.14 for 1 + GST

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Specifications

Output Capacitance(Coss)
75pF
Ciss-Input Capacitance
430pF
Pd - Power Dissipation
2.5W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
200V
Current - Continuous Drain(Id)
3.7A
Reverse Transfer Capacitance (Crss)
15pF
RDS(on)
1.4Ω@10V
Number
1 P-Channel
Gate Charge(Qg)
13nC@160V
Vgs
±30V
Gate Threshold Voltage (Vgs(th))
3V
Type
P-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.479 g

Overview

This P-channel enhancement-mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor controls, and variable switching power supply applications.

Applications

  • switched mode power supplies
  • audio amplifier
  • DC motor control
  • variable switching power applications

Key features

  • This P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
  • -3.7 A, -200 V, RDS(on)=1.4 Ω (Max.) @ VGS=-10 V, VD=-1.85 A
  • Low Gate Charge (Typ. 10 nC)
  • Low Crss (Typ. 12 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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