MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FQPF6N80C
N-Channel 800V 5.5A 51W Through Hole TO-220F-3
TO-220F-3ROHS3 CompliantActive
MOSFET N-CH 800V 5.5A TO-220F-3
- Manufacturer
- onsemi
- Manufacturer part #
- FQPF6N80C
- Store part #
- C11760
- Package / case
- TO-220F-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
99 in stock
#C11760
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹218.56 | ₹218.56 |
| 10+ | ₹183.43 | ₹1,834.30 |
| 50+ | ₹161.31 | ₹8,065.50 |
| 100+ | ₹138.77 | ₹13,877.00 |
| 500+ | ₹128.58 | ₹64,290.00 |
| 1,000+ | ₹124.02 | ₹1,24,020.00 |
1 × ₹218.56
₹218.56
excl. GST
₹257.90 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
FQPF6N80C
₹218.56 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 115pF
- Ciss-Input Capacitance
- 1.31nF
- Pd - Power Dissipation
- 51W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Current - Continuous Drain(Id)
- 5.5A
- Reverse Transfer Capacitance (Crss)
- 11pF
- RDS(on)
- 2.5Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 30nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.89 g
Overview
These N-channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-resistance, provide superior switching performance, and withstand high energy pulses in both avalanche and commutation modes. These devices are well suited for use in high-efficiency switch mode power supplies.
Applications
- high efficiency switch mode power supplies
Key features
- These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
- This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 5.5A, 800V, RDS(on)=2.5Ω @ VGS=10V
- Low gate charge ( typical 21 nC)
- Low Crss ( typical 8 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | YFW7N80AF#C55073015YFW · TO-220F | YFW | TO-220F | 49 | ₹94.32 · 49 in stock | View |
 | FMV06N90E#C34649336Fuji Electric · TO-220F | Fuji Electric | TO-220F | 7 | ₹148.96 · 7 in stock | View |
 | RSE80R500F#C49317657REASUNOS · TO-220F | REASUNOS | TO-220F | 448 | ₹109.80 · 448 in stock | View |
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