Varnitronics
FQPF7N80C onsemi
onsemi

FQPF7N80C

N-Channel 800V 6.6A 56W Through Hole TO-220F

TO-220FRoHSActive

MOSFET N-CH 800V 6.6A TO-220F

Manufacturer
onsemi
Manufacturer part #
FQPF7N80C
Store part #
C467788
Package / case
TO-220F
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

130 in stock

#C467788

Stock & price checked 11 days ago

QuantityUnit pricePack price
1+₹226.71₹226.71
10+₹191.86₹1,918.60
50+₹159.42₹7,971.00
100+₹137.21₹13,721.00
500+₹127.19₹63,595.00
1,000+₹122.62₹1,22,620.00

1 × ₹226.71

₹226.71

excl. GST

₹267.52 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
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  • GST invoice with every order
  • Standard pack: 50 per tube

FQPF7N80C

₹226.71 for 1 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
800V
Current - Continuous Drain(Id)
6.6A
Ciss-Input Capacitance
1.68nF
Pd - Power Dissipation
56W
Reverse Transfer Capacitance (Crss)
13pF
RDS(on)
1.9Ω@10V
Number
1 N-channel
Gate Charge(Qg)
35nC@640V
Gate Threshold Voltage (Vgs(th))
5V

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
50 / Tube
Sold per
Piece
Minimum order
1
Unit weight
0.6 g

Overview

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Applications

  • switched mode power supplies
  • active power factor correction (PFC)
  • electronic lamp ballasts

Key features

  • This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
  • This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
  • 6.6 A, 800 V, RDS(on)=1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A
  • Low Gate Charge (Typ. 27 nC)
  • Low Crss (Typ. 10 pF)
  • 100% Avalanche Tested

Alternatives

Similar parts — check the datasheet before substituting.

TSF7N80M#C382383Truesemi · TO-220F₹92.74 · 22 in stockView
CMF7N80A#C52976741Cmos · TO-220F₹80.12 · 134 in stockView
TK6A80E-OSEN#C50331597OSEN · TO-220F₹72.58 · 100 in stockView
AOTF8N80#C3280811AOS · TO-220F₹348.08 · 100 in stockView
10N80L-CQ-TF1-T#C2935500UTC · TO-220F1₹91.63 · 126 in stockView

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