Varnitronics
GS-065-011-1-L-MR Infineon
Infineon

GS-065-011-1-L-MR

650V 11A 150mΩ 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

PDFN-8(5x6)ROHS CompliantActive
Manufacturer
Infineon
Manufacturer part #
GS-065-011-1-L-MR
Store part #
C35905312
Package / case
PDFN-8(5x6)
Packaging
Bag-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

8 in stock

#C35905312

Stock & price checked 3 days ago

QuantityUnit pricePack price
1+₹825.51₹825.51
10+₹804.46₹8,044.60
30+₹790.37₹23,711.10
100+₹776.27₹77,627.00

1 × ₹825.51

₹825.51

excl. GST

₹974.10 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 250 per bag

GS-065-011-1-L-MR

₹825.51 for 1 + GST

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Specifications

Drain to Source Voltage
650V
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
20pF
Current - Continuous Drain(Id)
11A
Ciss-Input Capacitance
70pF
Technology
E-mode
Reverse Transfer Capacitance (Crss)
0.4pF
RDS(on)
150mΩ
Number
1 N-channel
Gate Charge(Qg)
2.2nC
Type
N-Channel
Gate Threshold Voltage (Vgs(th))
1.7V

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Bag-packed
Standard pack
250 / Bag
Sold per
Piece
Minimum order
1
Unit weight
5.513 g

Overview

GS-065-011-1-L is an enhancement-mode GaN-on-Si power transistor. The properties of GaN enable high current, high breakdown voltage, and high switching frequency. This product incorporates innovative technologies such as the patented Island Technology cell layout, achieving high-current dies and high yield. GS-065-011-1-L is a bottom-cooled transistor that provides extremely low junction-to-case thermal resistance for demanding high-power applications. These combined characteristics deliver highly efficient power switching.

Applications

  • Power adapters
  • LED lighting drivers
  • Fast battery charging
  • Power factor correction
  • Home appliance motor drives

Key features

  • 650V enhancement-mode power transistor
  • 850V transient drain-source voltage
  • Bottom-cooled compact 5×6 mm PDFN package
  • R_DS(on) = 150 mΩ
  • I_DSmax, DC = 11 A / I_DSmax, Pulse = 19 A
  • Ultra-low figure of merit
  • Simple gate drive requirements (0V to 6V)
  • Transient-tolerant gate drive (-20V/+10V)
  • High switching frequency (>1MHz)
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Source sense pin for optimized gate drive
  • RoHS 3 (6+4) compliant

Alternatives

Similar parts — check the datasheet before substituting.

GS-065-011-1-L-TR#C34601435Infineon · PDFN-8(5x6)₹923.98 · 1 in stockView
HCG65140DBA#C22396445HXY MOSFET · DFN-8L(5x6)₹444.09 · 48 in stockView
CID18N65D5#C22446734Tokmas · DFN-8(5x6)₹177.94 · 28 in stockView
HCG65200DBA#C22396443HXY MOSFET · DFN-8L(5x6)₹527.64 · 25 in stockView
CID10N65D5#C22446731Tokmas · DFN-8(5x6)₹129.64 · 253 in stockView

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