MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
HFS10N80-VB
N-Channel 800V 7A 99W Through Hole TO-220F
TO-220FRoHSActive
MOSFET N-CH 800V 7A TO-220F
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- HFS10N80-VB
- Store part #
- C20755231
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
8 in stock
#C20755231
Stock & price checked 33 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹243.04 | ₹243.04 |
| 10+ | ₹207.33 | ₹2,073.30 |
| 50+ | ₹184.85 | ₹9,242.50 |
| 100+ | ₹161.96 | ₹16,196.00 |
| 500+ | ₹151.67 | ₹75,835.00 |
| 1,000+ | ₹147.25 | ₹1,47,250.00 |
1 × ₹243.04
₹243.04
excl. GST
₹286.79 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
HFS10N80-VB
₹243.04 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Output Capacitance(Coss)
- 26pF
- Current - Continuous Drain(Id)
- 7A
- Ciss-Input Capacitance
- 373pF
- Pd - Power Dissipation
- 99W
- Reverse Transfer Capacitance (Crss)
- 14pF
- RDS(on)
- 850mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 26nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.1 g
Overview
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Key features
- Low figure-of-merit (FOM) R_on×Q_g
- Low input capacitance (C_iss)
- Reduced switching and conduction losses
- Ultra low gate charge (Q_g)
- Avalanche energy rated (UIS)
Alternatives
Similar parts — check the datasheet before substituting.
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