MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
R+ODatasheet (PDF)
HT03N270S
N-Channel 30V 8A 1.5W Surface Mount SOT-223
SOT-223ROHS CompliantActive
MOSFET N-CH 30V 8A SOT-223
- Manufacturer
- R+O
- Manufacturer part #
- HT03N270S
- Store part #
- C49066898
- Package / case
- SOT-223
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5,280 in stock
#C49066898
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹40.70 | ₹203.50 |
| 50+ | ₹31.96 | ₹1,598.00 |
| 150+ | ₹28.21 | ₹4,231.50 |
| 500+ | ₹23.54 | ₹11,770.00 |
| 2,500+ | ₹21.46 | ₹53,650.00 |
| 5,000+ | ₹20.20 | ₹1,01,000.00 |
5 × ₹40.70
₹203.50
excl. GST
₹240.13 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
HT03N270S
₹203.50 for 5 + GST
Specifications
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 109.4pF
- Current - Continuous Drain(Id)
- 8A
- Ciss-Input Capacitance
- 784pF
- Pd - Power Dissipation
- 1.5W
- Reverse Transfer Capacitance (Crss)
- 93.8pF
- RDS(on)
- 10mΩ@10V;14mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 19.4nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.213 g
Overview
3011A is an N-channel logic-level enhancement-mode power MOSFET fabricated using advanced trench technology with high cell density. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suitable for low-voltage applications where low in-line power dissipation is required in very compact SMT packages.
Applications
- Battery protection
- Load switch
- Power management
Key features
- Drain-Source Voltage (VDS) = 30 V
- Drain Current (ID) = 8 A
- On-Resistance (RDS(on)) < 15 mΩ at Gate-Source Voltage (VGS) = 10 V
- On-Resistance (RDS(on)) < 25 mΩ at Gate-Source Voltage (VGS) = 4.5 V
- High power and high current handling capability
- Voltage-controlled small-signal switching
- Fast switching speed
Alternatives
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