MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
HXY3419DF
30V 32A 3.57W 10mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
P-Channel Enhancement Mode MOSFET, Current:-32A, Breakdown Voltage:-30V
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HXY3419DF
- Store part #
- C3033459
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
378 in stock
#C3033459
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹26.70 | ₹26.70 |
| 10+ | ₹21.23 | ₹212.30 |
| 30+ | ₹18.89 | ₹566.70 |
| 100+ | ₹15.97 | ₹1,597.00 |
| 500+ | ₹14.67 | ₹7,335.00 |
| 1,000+ | ₹13.56 | ₹13,560.00 |
1 × ₹26.70
₹26.70
excl. GST
₹31.51 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
HXY3419DF
₹26.70 for 1 + GST
Specifications
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 194pF
- Current - Continuous Drain(Id)
- 32A
- Ciss-Input Capacitance
- 1.345nF
- Pd - Power Dissipation
- 3.57W
- Reverse Transfer Capacitance (Crss)
- 158pF
- RDS(on)
- 10mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 12.5nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1.95V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.069 g
Alternatives
Similar parts — check the datasheet before substituting.
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