MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
VBsemi ElecDatasheet (PDF)
HY3410P-VB
N-Channel 100V 100A 250W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 100V 100A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- HY3410P-VB
- Store part #
- C18795078
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C18795078
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹157.33 | ₹157.33 |
| 10+ | ₹129.73 | ₹1,297.30 |
| 50+ | ₹100.40 | ₹5,020.00 |
| 100+ | ₹86.71 | ₹8,671.00 |
| 500+ | ₹78.45 | ₹39,225.00 |
| 1,000+ | ₹74.33 | ₹74,330.00 |
1 × ₹157.33
₹157.33
excl. GST
₹185.65 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
HY3410P-VB
₹157.33 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 665pF
- Current - Continuous Drain(Id)
- 100A
- Ciss-Input Capacitance
- 4.7nF
- Pd - Power Dissipation
- 250W
- Reverse Transfer Capacitance (Crss)
- 265pF
- RDS(on)
- 9mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 160nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.998 g
Overview
Applications
- Active clamp in intermediate DC/DC power supplies - H-bridge high-side switch in lighting applications - P-channel MOSFET
Key features
- TrenchFET Power MOSFET
- 175 °C Maximum Junction Temperature
- Compliant to RoHS Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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