MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
HUAYIDatasheet (PDF)
HY5608W
N-Channel 80V 360A 500W Through Hole TO-247A-3L
TO-247A-3LROHS CompliantActive
MOSFET N-CH 80V 360A TO-247A-3L
- Manufacturer
- HUAYI
- Manufacturer part #
- HY5608W
- Store part #
- C2760540
- Package / case
- TO-247A-3L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
665 in stock
#C2760540
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹354.14 | ₹354.14 |
| 10+ | ₹309.77 | ₹3,097.70 |
| 30+ | ₹231.23 | ₹6,936.90 |
| 90+ | ₹202.52 | ₹18,226.80 |
| 660+ | ₹189.69 | ₹1,25,195.40 |
| 990+ | ₹184.25 | ₹1,82,407.50 |
1 × ₹354.14
₹354.14
excl. GST
₹417.89 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
HY5608W
₹354.14 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.714nF
- Ciss-Input Capacitance
- 14.715nF
- Pd - Power Dissipation
- 500W
- Operating Temperature
- -40℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 360A
- Reverse Transfer Capacitance (Crss)
- 853pF
- RDS(on)
- 2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 365nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.767 g
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