Varnitronics
IGLD65R140D2AUMA1 Infineon
Infineon

IGLD65R140D2AUMA1

650V 12A 42W 140mΩ N-Channel LSON-8 Single FETs, MOSFETs

LSON-8RoHSActive
Manufacturer
Infineon
Manufacturer part #
IGLD65R140D2AUMA1
Store part #
C42669667
Package / case
LSON-8
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

40 in stock

#C42669667

Stock & price checked 6 days ago

QuantityUnit pricePack price
1+₹449.09₹449.09
10+₹382.16₹3,821.60
30+₹342.27₹10,268.10
100+₹301.94₹30,194.00
500+₹283.41₹1,41,705.00
1,000+₹275.13₹2,75,130.00

1 × ₹449.09

₹449.09

excl. GST

₹529.93 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

IGLD65R140D2AUMA1

₹449.09 for 1 + GST

Need this with the rest of your board? Upload the BOM — we price every line.Upload BOM

Specifications

Drain to Source Voltage
650V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
12A
Output Capacitance(Coss)
22pF
Ciss-Input Capacitance
155pF
Technology
E-mode
Pd - Power Dissipation
42W
Reverse Transfer Capacitance (Crss)
0.31pF
RDS(on)
140mΩ
Gate Charge(Qg)
1.8nC
Type
N-Channel
Gate Threshold Voltage (Vgs(th))
1.2V

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.97 g

Overview

Infineon's CoolGaN™ is a high-efficiency 650 V GaN transistor designed for power conversion. It enables higher power density, helps reduce system BOM costs, and facilitates miniaturized form factors. The product is manufactured using 200 mm wafer technology with fully automated production lines, featuring tight manufacturing tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial use.

Applications

  • Industrial switching power supplies
  • Telecom switching power supplies
  • Data center switching power supplies
  • Chargers
  • Adapters

Key features

  • Enhancement-mode transistor
  • Ultra-fast switching speed
  • No reverse recovery charge
  • Reverse conduction capability
  • Low gate charge and output charge
  • Excellent commutation robustness
  • 2 kV HBM ESD compliant

Same category

More in Single FETs, MOSFETs

View all

MDD(Microdiode Semiconductor)

2N7002K

N-Channel 60V 300mA 300mW Surface Mount SOT-23

From

₹2.32

25,99,250 in stock

JSMSEMI

SI2302-2.3A-JSM

N-Channel 20V 2.3A 400mW Surface Mount SOT-23

From

₹2.05

15,87,450 in stock

JSMSEMI

2N7002

N-Channel 60V 115mA 200mW Surface Mount SOT-23

From

₹1.48

14,82,800 in stock

R+O

2N7002K

N-Channel 60V 340mA 350mW Surface Mount SOT-23

From

₹2.57

14,38,350 in stock

JSMSEMI

SI2301-A1SHB

P-Channel 20V 2.3A 0.35W Surface Mount SOT-23

From

₹2.14

13,68,550 in stock

R+O

HL3400

N-Channel 30V 5.6A 1.2W Surface Mount SOT-23

From

₹5.62

13,63,200 in stock