MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IGOT65R025D2AUMA1
650V 61A 184W 0.025Ω N-Channel DSO-20 Single FETs, MOSFETs RoHS
DSO-20ROHS CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IGOT65R025D2AUMA1
- Store part #
- C43313409
- Package / case
- DSO-20
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
12 in stock
#C43313409
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,465.46 | ₹1,465.46 |
| 10+ | ₹1,419.58 | ₹14,195.80 |
1 × ₹1,465.46
₹1,465.46
excl. GST
₹1,729.24 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
IGOT65R025D2AUMA1
₹1,465.46 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 130pF
- Current - Continuous Drain(Id)
- 61A
- Ciss-Input Capacitance
- 780pF
- Pd - Power Dissipation
- 184W
- Technology
- E-mode
- Reverse Transfer Capacitance (Crss)
- 1.8pF
- RDS(on)
- 0.025Ω
- Gate Charge(Qg)
- 11nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 1.2V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.11 g
Overview
Infineon's CoolGaN™ is a high-efficiency gallium nitride (GaN) transistor designed for 650V power conversion. It enables higher power density, supports reduced system BOM costs, and contributes to miniaturized form factors. The transistor is manufactured using 200mm (8-inch) wafer technology on a fully automated production line, featuring tight manufacturing tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial use.
Applications
- Industrial, telecom, and data center switched-mode power supplies based on half-bridge hard-switching and soft-switching topologies (such as totem-pole PFC and high-frequency LLC), as well as chargers and adapters.
Key features
- Enhancement-mode transistor
- Ultra-fast switching
- No reverse recovery charge
- Capable of reverse conduction
- Low gate and output charge
- Excellent commutation ruggedness
- 2kV HBM ESD rating
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