Varnitronics
IGT65R140D2ATMA1 Infineon
Infineon

IGT65R140D2ATMA1

650V 13A 47W 140mΩ 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS

HSOF-8ROHS3 CompliantActive
Manufacturer
Infineon
Manufacturer part #
IGT65R140D2ATMA1
Store part #
C43313444
Package / case
HSOF-8
Packaging
Tape & Reel (TR)
Datasheet (PDF)

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100% Authentic · 30-Day Return or Replacement · policy

81 in stock

#C43313444

Stock & price checked 2 days ago

QuantityUnit pricePack price
1+₹514.01₹514.01
10+₹442.66₹4,426.60
30+₹400.25₹12,007.50
100+₹357.40₹35,740.00
500+₹337.60₹1,68,800.00
1,000+₹328.69₹3,28,690.00

1 × ₹514.01

₹514.01

excl. GST

₹606.53 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,000 per reel

IGT65R140D2ATMA1

₹514.01 for 1 + GST

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Specifications

Drain to Source Voltage
650V
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
22pF
Current - Continuous Drain(Id)
13A
Ciss-Input Capacitance
155pF
Pd - Power Dissipation
47W
Technology
E-mode
Reverse Transfer Capacitance (Crss)
0.31pF
RDS(on)
140mΩ
Number
1 N-channel
Gate Charge(Qg)
1.8nC
Type
N-Channel
Gate Threshold Voltage (Vgs(th))
1.2V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1 g

Overview

Infineon's CoolGaN is a high-efficiency 650V GaN transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Manufactured using 200mm (8-inch) wafer technology on a fully automated production line, it features tight manufacturing tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial use.

Applications

  • Industrial, telecom, and data center switched-mode power supplies based on half-bridge hard-switching and soft-switching topologies (such as totem-pole PFC and high-frequency LLC), as well as chargers and adapters.

Key features

  • Enhancement-mode transistor
  • Ultra-fast switching
  • No reverse recovery charge
  • Capable of reverse conduction
  • Low gate and output charge
  • Excellent commutation ruggedness
  • 2kV HBM ESD rating

Alternatives

Similar parts — check the datasheet before substituting.

IGT60R190D1ATMA1#C22408564Infineon · HSOF-8₹1,178.73 · 6 in stockView

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