Varnitronics
IMBF170R450M1XTMA1 Infineon
Infineon

IMBF170R450M1XTMA1

1.7kV 9.8A 107W 450mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS

TO-263-7ROHS3 CompliantActive

1700V SiC Trench MOSFET

Manufacturer
Infineon
Manufacturer part #
IMBF170R450M1XTMA1
Store part #
C6968776
Package / case
TO-263-7
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

188 in stock

#C6968776

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹896.39₹896.39
10+₹764.95₹7,649.50
30+₹685.00₹20,550.00
100+₹617.87₹61,787.00

1 × ₹896.39

₹896.39

excl. GST

₹1,057.74 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,000 per reel

IMBF170R450M1XTMA1

₹896.39 for 1 + GST

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Specifications

Operating Temperature
-55℃~+175℃
Drain to Source Voltage
1.7kV
Current - Continuous Drain(Id)
9.8A
Output Capacitance(Coss)
16pF
Ciss-Input Capacitance
610pF
Pd - Power Dissipation
107W
Reverse Transfer Capacitance (Crss)
1.7pF
RDS(on)
450mΩ
Number
1 N-channel
Gate Charge(Qg)
11nC
Type
N-Channel
Gate Threshold Voltage (Vgs(th))
5.7V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
1,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1.98 g

Overview

Applications

  • Energy Generation
  • Industrial Power
  • Infrastructure

Key features

  • Revolutionary semiconductor material — Silicon Carbide (SiC)
  • Optimized for flyback topology
  • 12V/0V gate-source voltage, compatible with most flyback controllers
  • Ultra-low switching losses
  • Normalized gate threshold voltage, VGS(th) = 4.5V
  • Fully controllable dV/dt for EMI optimization

Alternatives

Similar parts — check the datasheet before substituting.

NTBG028N170M1#C5209020onsemi · D2PAK7(TO-263-7L-HV)₹4,564.18 · 0 in stockView
G3R160MT17J#C24789226Navitas · TO-263-7₹1,467.29 · 0 in stockView

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