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InfineonDatasheet (PDF)
IMBG65R033M2H
650V 58A 227W TO-263-7
TO-263-7ROHS3 CompliantActive
SICFET 650V 58A TO-263-7
- Manufacturer
- Infineon
- Manufacturer part #
- IMBG65R033M2H
- Store part #
- C42670690
- Package / case
- TO-263-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
7 in stock
#C42670690
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,430.03 | ₹1,430.03 |
| 10+ | ₹1,382.44 | ₹13,824.40 |
1 × ₹1,430.03
₹1,430.03
excl. GST
₹1,687.44 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
IMBG65R033M2H
₹1,430.03 for 1 + GST
Specifications
- Configuration
- Half-Bridge
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 117pF
- Current - Continuous Drain(Id)
- 58A
- Ciss-Input Capacitance
- 1.214nF
- Pd - Power Dissipation
- 227W
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 41mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 34nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 5.6V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.26 g
Overview
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Applications
- SMPS
- Solar PV inverters
- Energy storage and battery formation
- UPS
- EV charging infrastructure
- Motor drives
Key features
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th)=4.5 V
- Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best‑in‑class thermal performance
Alternatives
Similar parts — check the datasheet before substituting.
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