MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IMT65R057M1HXUMA1
650V 44A 203W 74mΩ 1 N-channel N-Channel HSOF-8-1 Single FETs, MOSFETs RoHS
HSOF-8-1ROHS3 CompliantActive
650 V CoolSiC M1 SiC Trench Power Device
- Manufacturer
- Infineon
- Manufacturer part #
- IMT65R057M1HXUMA1
- Store part #
- C6061978
- Package / case
- HSOF-8-1
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
7 in stock
#C6061978
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹711.81 | ₹711.81 |
| 10+ | ₹694.03 | ₹6,940.30 |
| 30+ | ₹682.10 | ₹20,463.00 |
| 100+ | ₹670.39 | ₹67,039.00 |
1 × ₹711.81
₹711.81
excl. GST
₹839.94 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
IMT65R057M1HXUMA1
₹711.81 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 139pF
- Current - Continuous Drain(Id)
- 44A
- Ciss-Input Capacitance
- 930pF
- Pd - Power Dissipation
- 203W
- Reverse Transfer Capacitance (Crss)
- 11pF
- RDS(on)
- 74mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 28nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 5.7V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.8 g
Overview
The 650 V CoolSiC TM is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC TM MOsFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Applications
- SMPS
- UPS (uninterruptable power supplies)
- Solar PV inverters
- EV charging infrastructure
- Energy storage and battery formation
- Class D amplifiers
Key features
- Optimized switching behavior at higher currents
- Commutation robust fast body diode with low Qf
- Superior gate oxide reliability
- Tj,max = 175℃ and excellent thermal behavior
- Lower Rps(on) and pulse current dependency on temperature
- Increased avalanche capability
- Compatible with standard drivers (recommended driving voltage: 0V - 18V)
- Kelvin source provides up to 4 times lower switching losses
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | IMT65R026M2HXUMA1#C42670744Infineon · HSOF-8 | Infineon | HSOF-8 | 15 | ₹1,571.47 · 15 in stock | View |
| IMT65R033M2HXUMA1#C43311734Infineon · HSOF-8 | Infineon | HSOF-8 | 20 | ₹1,658.42 · 20 in stock | View | |
 | IMT65R039M1HXUMA1#C20191541Infineon · HSOF-8-1 | Infineon | HSOF-8-1 | 20 | ₹1,104.24 · 20 in stock | View |
| IMT65R040M2HXUMA1#C42670745Infineon · HSOF-8 | Infineon | HSOF-8 | On request | ₹1,184.68 · 0 in stock | View | |
 | IMT65R020M2HXUMA1#C43311733Infineon · HSOF-8 | Infineon | HSOF-8 | On request | ₹1,956.45 · 0 in stock | View |
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