MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IMT65R163M1HXUMA1
106W 650V 19A 163mΩ@18V 1 N-channel N-Channel HSOF-8-1 Single FETs, MOSFETs RoHS
HSOF-8-1ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IMT65R163M1HXUMA1
- Store part #
- C5771892
- Package / case
- HSOF-8-1
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C5771892
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,202.58 | ₹1,202.58 |
| 10+ | ₹1,186.68 | ₹11,866.80 |
| 30+ | ₹1,175.94 | ₹35,278.20 |
| 100+ | ₹1,165.40 | ₹1,16,540.00 |
1 × ₹1,202.58
₹1,202.58
excl. GST
₹1,419.04 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
IMT65R163M1HXUMA1
₹1,202.58 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 45pF
- Ciss-Input Capacitance
- 320pF
- Pd - Power Dissipation
- 106W
- Configuration
- Standalone
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 19A
- Reverse Transfer Capacitance (Crss)
- 4.8pF
- RDS(on)
- 163mΩ@18V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 10nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 4.55 g
Overview
650 V CoolSiC™ is built on Infineon's mature SiC technology developed over more than 20 years. Leveraging the wide-bandgap properties of SiC material, the 650 V CoolSiC™ MOSFET combines high performance, high reliability, and ease of use. Designed for high-temperature and harsh operating conditions, it enables simplified and cost-effective system deployment at maximum efficiency.
Applications
- Switching Power Supplies
- Uninterruptible Power Supplies (UPS)
- Solar PV Inverters
- EV Charging Infrastructure
- Energy Storage and Battery Formation
- Class D Amplifiers
Key features
- Optimized switching characteristics at high current
- Robust fast body diode for commutation, low Qfr
- Excellent gate oxide reliability
- Tj, \max = 175℃, superior thermal performance
- Low temperature dependence of RDS(ON) and pulse current
- Enhanced avalanche capability
- Compatible with standard gate drivers
- Kelvin source reduces switching losses by up to 75%
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | IMT65R260M1HXUMA1#C6276618Infineon · HSOF-8-1 | Infineon | HSOF-8-1 | 1 | ₹997.32 · 1 in stock | View |
 | IMT65R022M1HXUMA1#C5740418Infineon · HSOF-8-1 | Infineon | HSOF-8-1 | 10 | ₹2,086.45 · 10 in stock | View |
 | IPT65R080CFD7XTMA1#C6883725Infineon · HSOF-8 | Infineon | HSOF-8 | On request | ₹1,001.18 · 0 in stock | View |
 | IPT60R080G7#C531213Infineon · HSOF-8 | Infineon | HSOF-8 | 3 | ₹751.85 · 3 in stock | View |
 | IPT65R033G7XTMA1#C3288782Infineon · HSOF-8 | Infineon | HSOF-8 | 1 | ₹3,786.85 · 1 in stock | View |
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