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InfineonDatasheet (PDF)
IMZA65R007M2HXKSA1
650V 210A 625W 8.5mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs
TO-247-4RoHSActive
- Manufacturer
- Infineon
- Manufacturer part #
- IMZA65R007M2HXKSA1
- Store part #
- C28441956
- Package / case
- TO-247-4
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C28441956
Stock & price checked 12 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹5,067.82 | ₹5,067.82 |
| 30+ | ₹4,803.75 | ₹1,44,112.50 |
1 × ₹5,067.82
₹5,067.82
excl. GST
₹5,980.03 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
IMZA65R007M2HXKSA1
₹5,067.82 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Half-Bridge
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 210A
- Output Capacitance(Coss)
- 613pF
- Ciss-Input Capacitance
- 6.359nF
- Pd - Power Dissipation
- 625W
- Reverse Transfer Capacitance (Crss)
- 35pF
- RDS(on)
- 8.5mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 179nC
- Gate Threshold Voltage (Vgs(th))
- 5.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 6.05 g
Overview
Based on Infineon's robust 2nd generation silicon carbide trench technology, the 650 V CoolSiC MOSFET delivers unmatched performance, superior reliability, and outstanding ease of use. It enables cost-effective, high-efficiency, and simplified designs to meet growing system and market demands.
Applications
- Switching power supplies
- Solar PV inverters
- Energy storage and battery formation
- EV charging infrastructure
- Motor drives
Key features
- Ultra-low switching losses
- Nominal gate threshold voltage, VGS(th) = 4.5 V
- Robust immunity to parasitic turn-on even at 0 V turn-off gate voltage
- Flexible drive voltage, compatible with bipolar drive schemes
- Robust body diode operation under hard commutation events
- .XT interconnect technology for best-in-class thermal performance
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
| IMZA120R007M1HXKSA1#C6061986Infineon · TO-247-4 | Infineon | TO-247-4 | On request | ₹7,475.32 · 0 in stock | View | |
| IMZA65R007M2HXKSA1-HXY#C53133874HXY MOSFET · TO-247H-4L | HXY MOSFET | TO-247H-4L | On request | ₹2,673.54 · 0 in stock | View | |
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