MDD(Microdiode Semiconductor)
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InfineonDatasheet (PDF)
IMZA65R083M1HXKSA1
650V 26A 104W 111mΩ@18V 1 N-channel TO-247-4 Single FETs, MOSFETs RoHS
TO-247-4ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IMZA65R083M1HXKSA1
- Store part #
- C6879297
- Package / case
- TO-247-4
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C6879297
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,354.12 | ₹1,354.12 |
| 10+ | ₹1,227.52 | ₹12,275.20 |
| 30+ | ₹1,150.35 | ₹34,510.50 |
| 90+ | ₹1,085.87 | ₹97,728.30 |
1 × ₹1,354.12
₹1,354.12
excl. GST
₹1,597.86 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
IMZA65R083M1HXKSA1
₹1,354.12 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 26A
- Ciss-Input Capacitance
- 624pF
- Pd - Power Dissipation
- 104W
- RDS(on)
- 111mΩ@18V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 19nC@18V
- Gate Threshold Voltage (Vgs(th))
- 5.7V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.718 g
Overview
650 V CoolSiC™ is built on Infineon's mature silicon carbide technology developed over more than 20 years. Leveraging the wide-bandgap properties of SiC material, the 650 V CoolSiC™ MOSFET combines outstanding performance, high reliability, and ease of use. It is suited for high-temperature and harsh operating conditions, enabling simple and cost-effective deployment at maximum system efficiency.
Applications
- Switching Power Supplies
- Uninterruptible Power Supplies (UPS)
- Solar PV Inverters
- EV Charging Infrastructure
- Energy Storage & Battery Formation
- Class D Amplifiers
Key features
- Optimized switching characteristics at high currents
- Robust fast body diode for reliable commutation, low Qfr
- Excellent gate oxide reliability
- Maximum junction temperature T i, max = 175°C with superior thermal performance
- Lower temperature dependence of RDS(on) and pulse current
- Enhanced avalanche capability
- Compatible with standard gate drivers
- Kelvin source enables up to 4x reduction in switching losses
Alternatives
Similar parts — check the datasheet before substituting.
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