MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
IPD035N06L3GATMA1-HXY
140W 60V 130A 3mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPD035N06L3GATMA1-HXY
- Store part #
- C54582521
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
36 in stock
#C54582521
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹90.89 | ₹90.89 |
| 10+ | ₹73.74 | ₹737.40 |
| 30+ | ₹65.17 | ₹1,955.10 |
| 100+ | ₹56.60 | ₹5,660.00 |
| 500+ | ₹51.66 | ₹25,830.00 |
| 1,000+ | ₹48.87 | ₹48,870.00 |
1 × ₹90.89
₹90.89
excl. GST
₹107.25 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IPD035N06L3GATMA1-HXY
₹90.89 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.666nF
- Ciss-Input Capacitance
- 5.377nF
- Pd - Power Dissipation
- 140W
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 130A
- Reverse Transfer Capacitance (Crss)
- 77.7pF
- RDS(on)
- 3mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 66.1nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.402 g
Overview
IPD035N06L3GATMA1 utilizes advanced SGT MOSFET technology, delivering low on-resistance, low gate charge, fast switching, and excellent avalanche characteristics. The device is specially designed for enhanced durability. Package type: TO-252-2L.
Applications
- Consumer electronics power supplies, motor control, synchronous rectification, isolated DC synchronous rectification applications, N-channel MOSFET
Key features
- Drain-source voltage VDS = 60V, drain current ID = 130A
- On-resistance RDS(ON) < 3.5mΩ at gate-source voltage VGS = 10V
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | IPD034N06N3GATMA1-HXY#C54582426HXY MOSFET · TO-252-2L | HXY MOSFET | TO-252-2L | 34 | ₹90.89 · 34 in stock | View |
 | IPD100N06S403ATMA2-HXY#C54582431HXY MOSFET · TO-252-2L | HXY MOSFET | TO-252-2L | 39 | ₹195.66 · 39 in stock | View |
 | IPD033N06NATMA1-HXY#C54582488HXY MOSFET · TO-252-2L | HXY MOSFET | TO-252-2L | 45 | ₹231.74 · 45 in stock | View |
 | AOD66616#C54582511HXY MOSFET · TO-252-2L | HXY MOSFET | TO-252-2L | 48 | ₹132.04 · 48 in stock | View |
 | IPD100N06S403ATMA1-HXY#C54582526HXY MOSFET · TO-252-2L | HXY MOSFET | TO-252-2L | 49 | ₹234.74 · 49 in stock | View |
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