MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
IPD180N10N3GATMA1-HXY
100V 60A 67.5W 13.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPD180N10N3GATMA1-HXY
- Store part #
- C55510146
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
48 in stock
#C55510146
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹78.93 | ₹78.93 |
| 10+ | ₹64.18 | ₹641.80 |
| 30+ | ₹56.60 | ₹1,698.00 |
| 100+ | ₹49.23 | ₹4,923.00 |
| 500+ | ₹44.89 | ₹22,445.00 |
| 1,000+ | ₹42.51 | ₹42,510.00 |
1 × ₹78.93
₹78.93
excl. GST
₹93.14 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IPD180N10N3GATMA1-HXY
₹78.93 for 1 + GST
Specifications
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 144pF
- Current - Continuous Drain(Id)
- 60A
- Ciss-Input Capacitance
- 1.208nF
- Pd - Power Dissipation
- 67.5W
- Reverse Transfer Capacitance (Crss)
- 11.3pF
- RDS(on)
- 13.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 22.7nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.404 g
Alternatives
Similar parts — check the datasheet before substituting.
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