MDD(Microdiode Semiconductor)
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HXY MOSFETDatasheet (PDF)
IPD250N06N3GBTMA1-HXY
34.7W 60V 30A 22mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPD250N06N3GBTMA1-HXY
- Store part #
- C54582522
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
40 in stock
#C54582522
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹39.40 | ₹197.00 |
| 50+ | ₹31.55 | ₹1,577.50 |
| 150+ | ₹28.19 | ₹4,228.50 |
| 500+ | ₹24.00 | ₹12,000.00 |
| 2,500+ | ₹19.81 | ₹49,525.00 |
| 5,000+ | ₹18.68 | ₹93,400.00 |
5 × ₹39.40
₹197.00
excl. GST
₹232.46 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IPD250N06N3GBTMA1-HXY
₹197.00 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 86pF
- Ciss-Input Capacitance
- 1.378nF
- Pd - Power Dissipation
- 34.7W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 30A
- Reverse Transfer Capacitance (Crss)
- 64pF
- RDS(on)
- 22mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 12.6nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.412 g
Overview
The IPD250N06N3GBTMA1 employs advanced trench technology to deliver excellent on-state resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications. Available in a TO-252-2L package.
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
Key features
- Drain-source voltage VDS = 60V, drain current ID = 30A
- On-resistance RDS(ON) < 26mΩ at gate-source voltage VGS = 10V
- N-channel MOSFET
Alternatives
Similar parts — check the datasheet before substituting.
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