Infineon

IPL60R065C7

650V 51A 180W 65mΩ@10V 1 N-channel N-Channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS

VSON-4-EP(8.1x8.1)ROHS3 CompliantActive

MOSFET N-CH 650V 51A VSON-4-EP(8.1x8.1)

Manufacturer: Infineon
Manufacturer part #: IPL60R065C7
Store part #: C537015
Package / case: VSON-4-EP(8.1x8.1)
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

20 in stock

#C537015

Stock & price checked 31 h ago

Quantity	Unit price	Pack price
1+	₹1,144.77	₹1,144.77
10+	₹1,126.28	₹11,262.80
30+	₹1,114.03	₹33,420.90
100+	₹1,101.56	₹1,10,156.00

Quantity (min 1)

1 × ₹1,144.77

₹1,144.77

excl. GST

₹1,350.83 incl. 18% GST

Need volume or a scheduled delivery? Request a quote

Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 3,000 per reel

IPL60R065C7

₹1,144.77 for 1 + GST

Need this with the rest of your board? Upload the BOM — we price every line.Upload BOM

Specifications

Operating Temperature: -40℃~+150℃
Drain to Source Voltage: 650V
Output Capacitance(Coss): 54pF
Current - Continuous Drain(Id): 51A
Ciss-Input Capacitance: 2.85nF
Pd - Power Dissipation: 180W
RDS(on): 65mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 68nC@10V
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 3.5V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
Packaging: Tape & Reel (TR)
Standard pack: 3,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.306 g

Overview

CoolMOS C7 is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS C7 series combines the experience of a leading SJ MOSFET supplier with best-in-class innovation. The 600V C7 is the first technology to achieve an RDS(on) × die area product below 1Ω·mm².

Applications

PFC stage and PWM stage (TTF, LLC) for high-power/high-performance SMPS, including computers, servers, telecommunications, UPS, and solar applications.

Key features

Suitable for hard-switching and soft-switching (PFC and high-performance LLC)
MOSFET dv/dt robustness up to 120V/ns
Enhanced efficiency with best-in-class figures of merit RDS(on) * Eoss and RDS(on) * Qg
Best-in-class RDS(on)/package ratio
SMD package with ultra-low parasitic inductance for improved device controllability
Compliant with JEDEC (J-STD20 and JESD22) industrial application standards
4-pin Kelvin source concept