MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
IPP052NE7N3G-VB
N-Channel 80V 28.6A 180W Through Hole TO-220AB
TO-220ABROHS CompliantActive
MOSFET N-CH 80V 28.6A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IPP052NE7N3G-VB
- Store part #
- C7569128
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C7569128
Stock & price checked 29 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹149.62 | ₹149.62 |
| 10+ | ₹124.75 | ₹1,247.50 |
| 50+ | ₹111.15 | ₹5,557.50 |
| 100+ | ₹95.64 | ₹9,564.00 |
| 500+ | ₹88.84 | ₹44,420.00 |
| 1,000+ | ₹85.86 | ₹85,860.00 |
1 × ₹149.62
₹149.62
excl. GST
₹176.55 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPP052NE7N3G-VB
₹149.62 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 80V
- Output Capacitance(Coss)
- 1.12nF
- Current - Continuous Drain(Id)
- 28.6A
- Ciss-Input Capacitance
- 3.855nF
- Pd - Power Dissipation
- 180W
- Reverse Transfer Capacitance (Crss)
- 376pF
- RDS(on)
- 7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 35.5nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.92 g
Overview
Applications
- Primary Side Switching
- Synchronous Rectification
- DC/AC Inverters
- LED Backlighting
Key features
- TrenchFET Power MOSFET
- 100 % Rg and UIS Tested
Alternatives
Similar parts — check the datasheet before substituting.
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