MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IPP50CN10NG-VB
N-Channel 100V 55A 3.75W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 100V 55A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IPP50CN10NG-VB
- Store part #
- C29779320
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
8 in stock
#C29779320
Stock & price checked 24 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹96.00 | ₹96.00 |
| 10+ | ₹77.30 | ₹773.00 |
| 50+ | ₹68.07 | ₹3,403.50 |
| 100+ | ₹58.61 | ₹5,861.00 |
| 500+ | ₹53.14 | ₹26,570.00 |
| 1,000+ | ₹50.21 | ₹50,210.00 |
1 × ₹96.00
₹96.00
excl. GST
₹113.28 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPP50CN10NG-VB
₹96.00 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 270pF
- Current - Continuous Drain(Id)
- 55A
- Ciss-Input Capacitance
- 4.5nF
- Pd - Power Dissipation
- 3.75W
- Reverse Transfer Capacitance (Crss)
- 90pF
- RDS(on)
- 36mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 60nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.19 g
Overview
Key features
- TrenchFET Power MOSFETS 175°C Junction Temperature
- Low Thermal Resistance Package
- N-Channel MOSFET
Alternatives
Similar parts — check the datasheet before substituting.
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