MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IRF100P218
100V 483A 556W Through Hole TO-247-3
TO-247-3ROHS3 CompliantActive
MOSFET 100V 483A TO-247-3
- Manufacturer
- Infineon
- Manufacturer part #
- IRF100P218
- Store part #
- C537740
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
195 in stock
#C537740
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹808.08 | ₹808.08 |
| 10+ | ₹695.33 | ₹6,953.30 |
| 25+ | ₹628.12 | ₹15,703.00 |
| 100+ | ₹560.48 | ₹56,048.00 |
| 400+ | ₹529.25 | ₹2,11,700.00 |
| 800+ | ₹515.16 | ₹4,12,128.00 |
1 × ₹808.08
₹808.08
excl. GST
₹953.53 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 25 per tube
IRF100P218
₹808.08 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 3.5nF
- Ciss-Input Capacitance
- 24nF
- Pd - Power Dissipation
- 556W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 483A
- Reverse Transfer Capacitance (Crss)
- 150pF
- RDS(on)
- 1.28mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 330nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 25 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 5.6 g
Overview
Key features
- Ultra-low on-resistance RDS(on)
- Excellent gate charge × RDS(on) (figure of merit FOM)
- Optimized reverse recovery charge Qrr
- 175°C operating temperature
- JEDEC-qualified
- Optimized for broad distribution partner availability
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