MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IRF7739L1TRPBF
N-Channel 40V 270A 125W Surface Mount MG-WDSON-11
MG-WDSON-11ROHS3 CompliantActive
MOSFET N-CH 40V 270A MG-WDSON-11
- Manufacturer
- Infineon
- Manufacturer part #
- IRF7739L1TRPBF
- Store part #
- C537822
- Package / case
- MG-WDSON-11
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
489 in stock
#C537822
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹474.57 | ₹474.57 |
| 10+ | ₹449.17 | ₹4,491.70 |
| 30+ | ₹433.97 | ₹13,019.10 |
| 100+ | ₹418.76 | ₹41,876.00 |
| 500+ | ₹411.60 | ₹2,05,800.00 |
| 1,000+ | ₹408.33 | ₹4,08,330.00 |
1 × ₹474.57
₹474.57
excl. GST
₹559.99 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
IRF7739L1TRPBF
₹474.57 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.51nF
- Ciss-Input Capacitance
- 11.88nF
- Pd - Power Dissipation
- 125W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 40V
- Current - Continuous Drain(Id)
- 270A
- Reverse Transfer Capacitance (Crss)
- 1.24nF
- RDS(on)
- 0.7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 220nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.55 g
Overview
The IRF7739L1TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D²PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN - 1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7739L1 TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters.
Applications
- Ideal for High Performance Isolated Converter Primary Switch Socket
- Optimized for Synchronous Rectification
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