MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IRF843PBF-VB
N-Channel 500V 13A 250W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 500V 13A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IRF843PBF-VB
- Store part #
- C22389313
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C22389313
Stock & price checked 24 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹131.92 | ₹131.92 |
| 10+ | ₹106.08 | ₹1,060.80 |
| 50+ | ₹93.27 | ₹4,663.50 |
| 100+ | ₹80.66 | ₹8,066.00 |
| 500+ | ₹72.90 | ₹36,450.00 |
| 1,000+ | ₹69.11 | ₹69,110.00 |
1 × ₹131.92
₹131.92
excl. GST
₹155.67 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IRF843PBF-VB
₹131.92 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 500V
- Current - Continuous Drain(Id)
- 13A
- Output Capacitance(Coss)
- 290pF
- Ciss-Input Capacitance
- 1.91nF
- Pd - Power Dissipation
- 250W
- Reverse Transfer Capacitance (Crss)
- 11pF
- RDS(on)
- 660mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 81nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.5 g
Overview
Key features
- Lower Gate Charge Qg Results in Simpler Drive Reqirements
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage
- Compliant to RoHS Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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